? semiconductor components industries, llc, 2005 june, 2005 ? rev. 5 1 publication order number: ntr1p02t1/d ntr1p02t1 power mosfet ?20 v, ?1 a, p?channel sot?23 package features ? ultra low on?resistance provides higher efficiency and extends battery life r ds(on) = 0.180 , v gs = ?10 v r ds(on) = 0.280 , v gs = ?4.5 v ? power management in portable and battery?powered products ? miniature sot?23 surface mount package saves board space ? mounting information for sot?23 package provided ? pb?free packages are available applications ? dc?dc converters ? computers ? printers ? pcmcia cards ? cellular and cordless telephones maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss ?20 v gate?to?source voltage ? continuous v gs 20 v drain current ? continuous @ t a = 25 c ? pulsed drain current (t p 1 s) i d i dm ?1.0 ?2.67 a total power dissipation @ t a = 25 c p d 400 mw operating and storage temperature range t j , t stg ? 55 to 150 c thermal resistance; junction?to?ambient r ja 300 c/w maximum lead temperature for soldering purposes, (1/8 from case for 10 s) t l 260 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. d g s device package shipping ? ordering information ntr1p02t1 sot?23 3000/tape & reel p?channel ntr1p02t3 sot?23 10,000/tape & reel http://onsemi.com ?20 v 148 m @ ?10 v r ds(on) typ ?1.0 a i d max v (br)dss sot?23 case 318 style 21 marking diagram/ pin assignment 2 p2 = specific device code m = date code = pb?free package (note: microdot may be in either location ) 3 1 3 drain 1 gate 2 source p2 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. m ntr1p02t1g sot?23 (pb?free) 3000/tape & reel NTR1P02T3G sot?23 (pb?free) 10,000/tape & reel
ntr1p02t1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (v gs = 0 v, i d = ?10 a) (positive temperature coefficient) v (br)dss ?20 32 v mv/ c zero gate voltage drain current (v ds = ?20 v, v gs = 0 v, t j = 25 c) (v ds = ?20 v, v gs = 0 v, t j = 150 c) i dss ?1.0 ?10 a gate?body leakage current (v gs = 20 v, v ds = 0 v) i gss 100 na on characteristics (note 1) gate threshold voltage (v ds = v gs , i d = ?250 a) (negative temperature coefficient) v gs(th) ?1.1 ?1.9 ?4.0 ?2.3 v mv/ c static drain?to?source on?state resistance (v gs = ?10 v, i d = ?1.5 a) (v gs = ?4.5 v, i d = ?0.75 a) r ds(on) 0.148 0.235 0.180 0.280 dynamic characteristics input capacitance (v ds = ?5 v, v gs = 0 v, f = 1.0 mhz) c iss 165 pf output capacitance (v ds = ?5 v, v gs = 0 v, f = 1.0 mhz) c oss 110 reverse transfer capacitance (v ds = ?5 v, v gs = 0 v, f = 1.0 mhz) c rss 35 switching characteristics (note 2) turn?on delay time (v dd = ?15 v, i d = ?1 a, v gs = ?5 v, r g = 2.5 ) t d(on) 7.0 ns rise time (v dd = ?15 v, i d = ?1 a, v gs = ?5 v, r g = 2.5 ) t r 9.0 turn?off delay time (v dd = ?15 v, i d = ?1 a, v gs = ?5 v, r g = 2.5 ) t d(off) 9.0 fall time (v dd = ?15 v, i d = ?1 a, v gs = ?5 v, r g = 2.5 ) t f 3.0 total gate charge (v ds = ?15 v, v gs = ?5 v, i d = ?0.8 a) q tot 2.5 nc gate?source charge (v ds = ?15 v, v gs = ?5 v, i d = ?0.8 a) q gs 0.75 gate?drain charge (v ds = ?15 v, v gs = ?5 v, i d = ?0.8 a) q gd 1.0 body?drain diode ratings (note 1) diode forward on?voltage (note 2) (i s = ?0.6 a, v gs = 0 v) (i s = ?0.6 a, v gs = 0 v, t j = 150 c) v sd ?0.8 ?0.6 ?1.0 v reverse recovery time (i s = ?1 a, di s /dt = 100 a/ s, v gs = 0 v) t rr 13.5 ns t a 10.5 t b 3.0 reverse recovery stored charge (i s = ?1 a, di s /dt = 100 a/ s, v gs = 0 v) q rr 0.008 c 1. pulse test: pulse width 300 s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature.
ntr1p02t1 http://onsemi.com 3 ?4 v 1 1.25 0.75 2 0.5 0.25 0 1.5 0.275 0.25 0.2 0.15 0.1 0.05 ?v ds , drain?to?source voltage (volts) ?i d , drain current (amps) ?v gs , gate?to?source voltage (volts) ?i d , drain current (amps) ?i d , drain current (amps) ?i d , drain current (amps) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance ( ) t j , junction temperature ( c) ?v ds , drain?to?source voltage (volts) r ds(on) , drain?to?source resistance (normalized) ?i dss , leakage (na) 2.5 1.5 0.5 0 10 100 1000 0 1.5 1.25 1 0.5 0.25 0.5 figure 1. on?region characteristics figure 2. transfer characteristics 0.1 0.45 0.35 0.3 0.2 0.25 0.1 0.05 0.6 1 figure 3. on?resistance versus drain current and temperature figure 4. on?resistance versus drain current and temperature figure 5. on?resistance variation with temperature figure 6. drain?to?source leakage current versus voltage 2.5 ?45 55 30 5 ?20 80 130 105 14 2 1.5 111 32 1 0 2 0.2 0.8 0.6 0.4 1 1. 6 1.2 155 2 1.5 2.5 3 3.5 v ds ?10 v t j = 25 c t j = ?40 c t j = 125 c v gs = ?4.5 v v gs = 0 v t j = 125 c t j = 150 c i d = ?1.5 a v gs = ?10 v v gs = ?2.5 v 0.8 1.4 ?3 v t j = 25 c v gs = ?10 v t j = 25 c t j = ?40 c t j = 150 c 1 1 0.75 1.75 ?3.5 v ?4.5 v 1.75 1.25 0.75 0.25 2.25 1.75 0.5 0.4 0.7 0.9 0.15 0.2 0.3 0.4 t j = 25 c t j = 150 c t j = ?40 c 0.075 0.125 0.225 0.175 1 2 579 13151719
ntr1p02t1 http://onsemi.com 4 c iss gate?to?source or drain?to?source voltage (volts) c, capacitance (pf) q g , total gate charge (nc) ?v gs , gate?to?source voltage (volts ) r g , gate resistance ( ) v sd , source?to?drain voltage (volts) i s , source current (amps) t, time (ns) 100 1 6 3 1.5 0 1.001 0.401 0.201 0.101 0.001 10 10 300 15 5 0 250 200 150 100 0 figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage versus total charge figure 9. resistive switching time variation versus gate resistance figure 10. diode forward voltage versus current 25 0 1 0.5 1 10 100 2.0e?01 4.0e?01 3.0e?01 5.0e?01 7.0e?0 1 50 10 1.5 2 i d = ?1 a t j = 25 c t j = 25 c c rss c oss c iss v dd = ?15 v i d = ?1 a v gs = ?5 v v gs = 0 v t j = 25 c t r t d(off) t d(on) t f q t q 2 q 1 520 c rss v gs = 0 v v ds = 0 v v gs v ds 0.301 0.801 0.601 0.501 0.701 0.901 6.0e?01 ?v gs ?v ds 4.5
ntr1p02t1 http://onsemi.com 5 package dimensions sot?23 (to?236) case 318?08 issue al mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 style 21: pin 1. gate 2. source 3. drain *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* b c l d a e a1 e 3 1 2 dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.35 0.54 0.69 0.014 2.10 2.40 2.64 0.083 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318?01 thru ?07 and ?09 obsolete, new standard 318?08. h e 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.021 0.029 0.094 0.104 nom max h e
ntr1p02t1 http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 ntr1p02t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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